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JANSR2N7440
Data Sheet November 1999 File Number 4803
Formerly Available as FSS913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. Also available at other radiation and screening levels. See us on the web, Intersil's home page: http://www.intersil.com. Contact your local Intersil Sales Office for additional information.
Features
* 10A, -100V, rDS(ON) = 0.280 * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) * Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias * Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM * Photo Current - 1.5nA Per-RAD(Si)/s Typically * Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2
Symbol
D
G
S
Packaging
TO-257AA
S
Ordering Information
PART NUMBER JANSR2N7440 PACKAGE TO-257AA BRAND JANSR2N7440
D
G
Die Family TA17796. MIL-PRF-19500/659.
CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications.
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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
JANSR2N7440
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified JANSR2N7440 Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100H, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -100 -100 10 6 30 20 56 22 0.45 30 10 30 -55 to 150 300 4.4 UNITS V V A A A V W W W/oC A A A oC oC g
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) TEST CONDITIONS ID = 1mA, VGS = 0V VGS = VDS, ID = 1mA TC = -55oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC MIN -100 -2.0 -1.0 VGS = 0V to -20V VGS = 0V to -12V VGS = 0V to -2V VDD = -50V, ID = 10A TYP 0.190 36 6.6 17 MAX -7.0 -6.0 25 250 100 200 -3.10 0.280 0.500 20 55 45 35 60 40 2.5 7.4 19 2.2 60 UNITS V V V V A A nA nA V ns ns ns ns nC nC nC nC nC
oC/W oC/W
Drain to Source Breakdown Voltage Gate Threshold Voltage
Zero Gate Voltage Drain Current
IDSS
VDS = -80V, VGS = 0V VGS = 20V
Gate to Source Leakage Current
IGSS
Drain to Source On-State Voltage Drain to Source On Resistance
VDS(ON) rDS(ON)12
VGS = -12V, ID = 10A ID = 6A, VGS = -12V TC = 25oC TC = 125oC
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Not on slash sheet) Gate Charge at 12V Threshold Gate Charge (Not on slash sheet) Gate Charge Source Gate Charge Drain Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient
td(ON) tr td(OFF) tf Qg(TOT) Qg(12) Qg(TH) Qgs Qgd RJC RJA
VDD = -50V, ID = 10A, RL = 5.0, VGS = -12V, RGS = 7.5
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JANSR2N7440
Source to Drain Diode Specifications
PARAMETER Forward Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = 10A ISD = 10A,dISD/dt = 100A/s TC = 25oC, Unless Otherwise Specified SYMBOL (Note 3) (Note 3) (Notes 2, 3) (Note 3) (Notes 1, 3) (Notes 1, 3) BVDSS VGS(TH) IGSS IDSS VDS(ON) rDS(ON)12 TEST CONDITIONS VGS = 0, ID = 1mA VGS = VDS, ID = 1mA VGS = 20V, VDS = 0V VGS = 0, VDS = -80V VGS = -12V, ID = 10A VGS = -12V, ID = 6A MIN -100 -2.0 MAX -6.0 100 25 -3.10 0.280 UNITS V V nA A V MIN -0.6 TYP MAX -1.8 160 UNITS V ns
Electrical Specifications up to 100K RAD
PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Leakage Zero Gate Leakage Drain to Source On-State Volts Drain to Source On Resistance NOTES: 1. Pulse test, 300s Max. 2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS .
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5) TEST Single Event Effects Safe Operating Area SYMBOL SEESOA ION SPECIES Ni Br Br Br NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) 20 10 15 20 (NOTE 6) MAXIMUM VDS BIAS (V) -100 -100 -80 -50
Performance Curves
LET = 26MeV/mg/cm2, RANGE = 43 LET = 37MeV/mg/cm2, RANGE = 36 FLUENCE = 1E5 IONS/cm2 (TYPICAL) 1E-3 LIMITING INDUCTANCE (HENRY)
-120 -100 -80 VDS (V) -60 -40 -20 0
1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6
TEMP = 25oC 0 5 10 VGS (V) 15 20 25
1E-7 -10
-30
-100 DRAIN SUPPLY (V)
-300
-1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS
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JANSR2N7440 Performance Curves
12 10 8 6 4 2 0 -50 0.1
(Continued)
100
TC = 25oC
ID , DRAIN CURRENT (A)
100s 10 1ms
ID , DRAIN (A)
10ms 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) -1 -10 100ms
0
50
100
150
-100
-300
TC , CASE TEMPERATURE (oC)
VDS , DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5 PULSE DURATION = 250ms, VGS = -12V, ID = 6A 2.0 NORMALIZED rDS(ON)
-12V
QG
1.5
1.0
QGS VG
QGD
0.5
0.0 -80 CHARGE
-40
0
40
80
120
160
TJ , JUNCTION TEMPERATURE (oC)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. TYPICAL NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE
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THERMAL RESPONSE (ZJC)
1 0.5 0.2 0.1 0.05 0.02 0.01
NORMALIZED
0.1
SINGLE PULSE PDM NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC
0.01 t1 t2 10-2 10-1 100 101
0.001 10-5
10-4
10-3
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
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JANSR2N7440 Performance Curves
(Continued)
40 IAS , AVALANCHE CURRENT (A)
STARTING TJ = 25oC 10 STARTING TJ = 150oC
IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 1 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) 10
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS L + CURRENT I TRANSFORMER AS tP IAS +
BVDSS VDS VDD
-
VARY tP TO OBTAIN REQUIRED PEAK IAS 0V tP
50
DUT 50
VDD
50V-150V
VGS 20V
tAV
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
VDD
tON td(ON)
tOFF td(OFF) tr tf 90%
RL VDS 0V DUT
VDS
90%
10%
10%
VGS = -12V
90% RGS VGS 10% 50% PULSE WIDTH 50%
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
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JANSR2N7440 Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
Delta Tests and Limits (JANS) TC = 25oC, Unless Otherwise Specified
PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current Drain to Source On Resistance Gate Threshold Voltage NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. SYMBOL IGSS IDSS rDS(ON) VGS(TH) TEST CONDITIONS VGS = 20V VDS = 80% Rated Value TC = 25oC at Rated ID ID = 1.0mA MAX 20 (Note 7) 25 (Note 7) 20% (Note 8) 20% (Note 8) UNITS nA A V
Screening Information
TEST Unclamped Inductive Switching Thermal Response Gate Stress Pind Pre Burn-In Tests (Note 9) Steady State Gate Bias (Gate Stress) Interim Electrical Tests (Note 9) Steady State Reverse Bias (Drain Stress) PDA Final Electrical Tests (Note 9) NOTE: 9. Test limits are identical pre and post burn-in. JANS VGS(PEAK) = -15V, L = 0.1mH; Limit = 30A tH = 100ms; VH = -25V; IH = 1A; Limit = 85mV VGS = -30V, t = 250s Required MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours All Delta Parameters Listed in the Delta Tests and Limits Table MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours 5% MIL-S-19500, Group A, Subgroups 2 and 3
Additional Screening Tests
PARAMETER Safe Operating Area Thermal Impedance SYMBOL SOA VSD TEST CONDITIONS VDS = -80V, t = 10ms tH = 500ms; VH = -25V; IH = 1A MAX 1.9 125 UNITS A mV
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JANSR2N7440 Rad Hard Data Packages - Intersil Power Transistors
1. JANS Rad Hard - Standard Data Package
A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data F. Group A G. Group B H. Group C I. Group D - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet - Attributes Data Sheet
2. JANS Rad Hard - Optional Data Package
A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data
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JANSR2N7440 TO-257AA
3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE
A E Q H1 OP A1
INCHES SYMBOL A A1 Ob Ob1 D E e MIN 0.190 0.035 0.025 0.060 0.645 0.410 MAX 0.200 0.045 0.035 0.090 0.665 0.420
MILLIMETERS MIN 4.83 0.89 0.64 1.53 16.39 10.42 MAX 5.08 1.14 0.88 2.28 16.89 10.66 NOTES 2, 3 4 4 4 -
D
0.100 TYP 0.200 BSC 0.230 0.110 0.600 0.140 0.113 0.250 0.130 0.650 0.035 0.150 0.133
2.54 TYP 5.08 BSC 5.85 2.80 15.24 3.56 2.88 6.35 3.30 16.51 0.88 3.81 3.37
L1 L
0.065 R TYP.
Ob1
e1 H1 J1
Ob
L L1
1
2
3 J1
OP Q
e e1
NOTES: 1. These dimensions are within allowable dimensions of Rev. B of JEDEC TO-257AA dated 9-88. 2. Add typically 0.002 inches (0.05mm) for solder coating. 3. Lead dimension (without solder). 4. Position of lead to be measured 0.150 inches (3.81mm) from bottom of dimension D. 5. Die to base BeO isolated, terminals to case ceramic isolated. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93.
WARNING!
BERYLLIA WARNING PER MIL-S-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its' compounds.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
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